Memory cell and method for producing the memory cell

Details Memory cell and method for producing the memory cell Memory cell and method for producing the memory cell

1997-06-30

1999-11-02

Crane, Sara

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438265, H01L 21266

Patent

active

059769327

ABSTRACT:
A memory cell and a method for producing the memory cell have a plurality of structured layers disposed on a semiconducting base body and an exactly defined overlap region of a first doped region and a floating gate layer. A control gate layer is disposed approximately without any overlap over the first doped region. The memory cell can be programmed with the aid of the Fowler-Nordheim tunnel effect.

REFERENCES:
patent: 3868187 (1975-02-01), Masuoka
patent: 4004159 (1977-01-01), Rai et al.
patent: 4161039 (1979-07-01), Rossler
patent: 4420871 (1983-12-01), Sheibe
patent: 4852062 (1989-07-01), Baker et al.
patent: 5256584 (1993-10-01), Hartmann
patent: 5506432 (1996-04-01), Kurusu
Patent Abstracts of Japan (Noda Masanori), dated Mar. 12, 1990, vol. 14, No. 252.
Patent Abstracts of Japan (Yamamoto Hideaki), dated Jan. 9, 1990, vol. 14, No. 139.
Patent Abstracts of Japan (Kitagawa Norio), dated Sep. 2, 1994, vol. 18, No. 629.
Patent Abstracts of Japan (Yamaguchi Takao), dated Oct. 6, 1982, vol. 7, No. 4.

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