Static information storage and retrieval – Read/write circuit – Precharge
Reexamination Certificate
2008-03-11
2008-03-11
Tran, Michael T (Department: 2827)
Static information storage and retrieval
Read/write circuit
Precharge
C365S208000
Reexamination Certificate
active
07342839
ABSTRACT:
A circuit for accessing a memory cell includes a local bitline and a local sense amplifier having a plurality of transistors. The local bitline may be connect the memory cell and the sense amplifier. A first global bitline may be connected to a first one of the plurality of transistors. A second global bitline may be connected to a second one of the plurality of transistors. A secondary sense amplifier may be connected to the first and second global bitlines.
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Downs Rachlin & Martin PLLC
International Business Machines - Corporation
Tran Michael T
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