Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Multiple housings
Reexamination Certificate
2007-04-17
2007-04-17
Clark, Jasmine (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Multiple housings
C257S686000, C257S777000, C257S787000, C257S789000, C257SE25006, C257SE25013, C257SE25018, C438S106000, C438S112000, C438S124000, C438S126000, C438S127000, C438S508000
Reexamination Certificate
active
10904975
ABSTRACT:
A memory card structure comprising a substrate, a plurality of memory chips, some package material and an ultra-thin plastic shell is provided. To fabricate the memory card, a substrate having a first surface and a second surface is provided. The first surface has a plurality of outer contacts and the second surface has at least a cavity. There is a plurality of inner contacts around the cavity. Furthermore, the outer contacts and the inner contacts are electrically connected to each other. The memory chips are stacked up inside the cavity and electrically connected to the inner contacts of the substrate. Then, the memory chips and the inner contacts are encapsulated using the molding compound. Thereafter, the ultra-thin plastic shell is placed over the second surface and attached to the substrate. That portion of the ultra-thin plastic shell covering the memory chips has a thickness of about 0.1˜0.15 mm.
REFERENCES:
patent: 5811877 (1998-09-01), Miyano et al.
patent: 6777797 (2004-08-01), Egawa
Chuang Hui-Chuan
Jiang Ming-Jhy
Kuo Cheng-Hsien
Yu Cheng-Kang
Advanced Flash Memory Card Technology Co., Ltd.
Clark Jasmine
Jiang Chyun IP Office
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