Memory bit line leakage repair

Details Memory bit line leakage repair Memory bit line leakage repair

2005-09-27

2005-09-27

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Read/write circuit

Precharge

C365S154000, C365S206000

Reexamination Certificate

active

06950359

ABSTRACT:
Techniques for replacing and eliminating paths causing channel leakage current. In one embodiment, one or more precharge enable transistors and a precharge enable signal are added to a circuit configuration. The precharge enable transistors are designed to remain on and simply pass a signal in a properly functioning path. When a leakage path is identified, such as during IDDQ testing, the precharge enable signal is set to turn off the precharge enable transistors. When the precharge enable transistors are off, the leakage path is disrupted, and the leakage current stopped. The path may be replaced with a redundant path.

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patent: 0642137 (1994-08-01), None

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