Static information storage and retrieval – Systems using particular element – Capacitors
Reexamination Certificate
2006-10-10
2006-10-10
Phung, Anh (Department: 2824)
Static information storage and retrieval
Systems using particular element
Capacitors
C257S296000
Reexamination Certificate
active
07120046
ABSTRACT:
A memory array with staggered local data/bit lines extending generally in a first direction formed in an upper surface of a substrate and memory cell access transistors extending generally upward and aligned generally atop a corresponding local data/bit line. Selected columns of the memory cell access transistors are sacrificed to define local data/bit access transistors which are interconnected with overlying low resistance global data/bit lines. The global data/bit lines provide selectable low resistance paths between memory cells and sense amplifiers. The sacrificed memory cell access transistors and staggered local data/bit lines provide increased footprints for sense amplifiers to facilitate increased circuit integration.
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