Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2010-02-01
2010-10-12
Andújar, Leonardo (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S903000, C257SE27099
Reexamination Certificate
active
07812407
ABSTRACT:
A memory array with a row of strapping cells is provided. In accordance with embodiments of the present invention, strapping cells are positioned between two rows of a memory array. The strapping cells provide a P+ strap between N+ active areas of two memory cells in a column and provide an N+ strap between P+ active areas of two memory cells in a column of the memory array. The strapping cells provide an insulating structure between the two rows of the memory array and create a more uniform operation of the memory cells regardless of the positions of the memory cells within the memory array. In an embodiment, a dummy N-well may be formed along the outer edge of the memory array in a direction perpendicular to the row of strapping cells. Furthermore, transistors may be formed in the strapping cells to provide additional insulation between the strapped memory cells.
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Andújar Leonardo
Roland Christopher M
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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