Memory array having improved isolation between sense lines

Details Memory array having improved isolation between sense lines Memory array having improved isolation between sense lines

1980-05-29

1982-01-19

Hecker, Stuart N.

Static information storage and retrieval

Read/write circuit

Having particular data buffer or latch

365104, 365190, 365206, G11C 702

Patent

active

043120474

ABSTRACT:
A memory array having improved isolation between the bit sense common lines is provided by using diode connected transistors. The diode connected transistors substantially eliminate any current flow between bit sense common lines when a certain portion of the column select circuitry has not been selected. Since the blocking transistors prevent current flow there is no noise generated to be coupled to one of the control lines. This results in a memory array which can operate at higher speeds since better differential signals are established to be sensed by the sense amplifier.

REFERENCES:
patent: 4237547 (1980-12-01), Smith
Hsieh, "Read and Write for Random-Access Memory Array", IBM Tech. Disc. Bul., vol. 18, No. 6, 11/75, pp. 1849-1850.

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