Static information storage and retrieval – Read/write circuit – Noise suppression
Reexamination Certificate
2011-06-28
2011-06-28
Dinh, Son (Department: 2824)
Static information storage and retrieval
Read/write circuit
Noise suppression
C365S207000, C365S208000, C365S189060, C365S210130
Reexamination Certificate
active
07969804
ABSTRACT:
A memory architecture is provided with an array of non-volatile memory cells arranged in rows and columns, and a sense amplifier coupled to at least one column within the array for sensing a data bit stored within one of the non-volatile memory cells. In order to provide accurate sensing, a reference current generator is provided and coupled to the sense amplifier. The reference current generator provides a first reference current having adjustable magnitude and adjustable slope, and a second reference current having adjustable magnitude, but constant slope. The first reference current is supplied to the sense amplifier for sensing the data bit. The second reference current is supplied to a control block for generating clock signals used to control sense amplifier timing.
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Georgescu Bogdan
Gitlan Leonard Vasile
Hirose Ryan T.
Jenne Fredrick
Kouznetsov Igor G.
Cypress Semiconductor Corporation
Dinh Son
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