Memory and manufacturing method thereof

Details Memory and manufacturing method thereof Memory and manufacturing method thereof

2006-08-30

2009-10-27

Menz, Laura M (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S276000, C438S735000

Reexamination Certificate

active

07608504

ABSTRACT:
A memory is provided. The memory includes a substrate, a number of parallel bit lines, a number of parallel word lines and at least a oxide-nitride-oxide (ONO) structure. The bit lines are disposed in the substrate. The word lines are disposed on the substrate. The word lines are crossed with but not perpendicular to the bit lines. The ONO structure is disposed between the word lines and the substrate.

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