Static information storage and retrieval – Read/write circuit – Precharge
Reexamination Certificate
2011-08-30
2011-08-30
Le, Vu A (Department: 2824)
Static information storage and retrieval
Read/write circuit
Precharge
C365S185250, C365S233110
Reexamination Certificate
active
08009495
ABSTRACT:
Methods, apparatuses and systems of operating digital memory where the digital memory device including a plurality of memory cells receives a command to perform an operation on a set of memory cells, where the set of memory cells contains fewer memory cells than the device as a whole and where the device performs the operation including selectively precharging on the front end of the operation, in response to the received command, only a set of bit lines associated with the set of memory cells.
REFERENCES:
patent: 4208730 (1980-06-01), Dingwall et al.
patent: 4335459 (1982-06-01), Miller
patent: 4685089 (1987-08-01), Patel et al.
patent: 5214610 (1993-05-01), Houston
patent: 5233560 (1993-08-01), Foss et al.
patent: 5381363 (1995-01-01), Bazes
patent: 5416746 (1995-05-01), Sato et al.
patent: 5598374 (1997-01-01), Rao
patent: 5636174 (1997-06-01), Rao
patent: 5657285 (1997-08-01), Rao
patent: 5686730 (1997-11-01), Laudon et al.
patent: 5745428 (1998-04-01), Rao
patent: 5802395 (1998-09-01), Connolly et al.
patent: 5825710 (1998-10-01), Jeng et al.
patent: 5828610 (1998-10-01), Rogers et al.
patent: 5835932 (1998-11-01), Rao
patent: 5856940 (1999-01-01), Rao
patent: 5880990 (1999-03-01), Miura
patent: 5995438 (1999-11-01), Jeng et al.
patent: 6101579 (2000-08-01), Randolph et al.
patent: 6256221 (2001-07-01), Holland et al.
patent: 6512715 (2003-01-01), Okamoto et al.
patent: 6529412 (2003-03-01), Chen et al.
patent: 6621758 (2003-09-01), Cheung et al.
patent: 6779076 (2004-08-01), Shirley
patent: 6959272 (2005-10-01), Wohl et al.
patent: 7124348 (2006-10-01), Nicolaidis
patent: 7139213 (2006-11-01), Rao
patent: 7207024 (2007-04-01), Scheffer
patent: 7254690 (2007-08-01), Rao
patent: 7755961 (2010-07-01), Rao
patent: 2001/0015933 (2001-08-01), Reddy et al.
patent: 2002/0174292 (2002-11-01), Morita et al.
patent: 2003/0008446 (2003-01-01), Osada et al.
patent: 2005/0007847 (2005-01-01), Bell et al.
patent: 2005/0028061 (2005-02-01), Nicolaidis
patent: 2005/0207201 (2005-09-01), Madan et al.
patent: 2006/0067129 (2006-03-01), La Rosa et al.
patent: 2007/0028060 (2007-02-01), Ware et al.
patent: 2008/0123450 (2008-05-01), Rao
patent: 2008/0123451 (2008-05-01), Rao
patent: 2009/0097346 (2009-04-01), Rao
Office Action, issued in U.S. Appl. No. 11/875,636, mailed Mar. 18, 2010, 7 pages.
Office Action, issued in U.S. Appl. No. 11/875,636, mailed Aug. 30, 2010, 8 pages.
Advisory Action, issued in U.S. Appl. No. 11/873,283, mailed Sep. 21, 2010, 2 pages.
International Search Report, issued in International Patent Application No. PCT/US2008/080530, mailed Jan. 23, 2009, 10 pages.
International Preliminary Report on Patentability, issued in International Patent Application No. PCT/US2008/080530, mailed Apr. 29, 2010, 8 pages.
Office Action, issued in U.S. Appl. No. 11/873,283, mailed Nov. 3, 2010, 12 pages.
Office Action, issued in Korean Patent Application No. 10-2009-7002538, mailed Oct. 27, 2010, 2 pages.
Notice of Allowance, issued in U.S. Appl. No. 11/771,853, mailed Aug. 19, 2009.
Office Action, issued in U.S. Appl. No. 11/771,853, mailed Sep. 24, 2008.
Office Action, issued in U.S. Appl. No. 11/771,853, mailed Jan. 13, 2009.
Notice of Allowance, issued in U.S. Appl. No. 11/771,853, mailed Jan. 8, 2010 .
Office Action, issued in U.S. Appl. No. 11/771,895, mailed Oct. 30, 2008.
Office Action, issued in U.S. Appl. No. 11/771,895, mailed Jun. 17, 2008.
International Search Report and Written Opinion of the International Searching Authority, for PCT/US2007/072981, mailed Jul. 16, 2008, 7 pages.
International Search Report and Written Opinion of the International Searching Authority, for PCT/US2007/072974, mailed Jul. 16, 2008, 9 pages.
Supplementary European Search Report, for EP 07 79 9372, mailed Aug. 12, 2009, 3 pages.
European Patent Office Examination Report, for EP 07 79 9372, mailed Aug. 21, 2009, 5 pages.
Supplementary European Search Report, for EP 07 81 2687, mailed Aug. 12, 2009, 3 pages.
European Patent Office Examination Report, for EP 07 81 2687, mailed Aug. 21, 2009, 3 pages.
Office Action, issued in U.S. Appl. No. 11/771,895, mailed Sep. 16, 2009.
Office Action, issued in U.S. Appl. No. 11/873,283, mailed Dec. 31, 2009.
Office Action, issued in U.S. Appl. No. 11/873,283, mailed Jun. 25, 2009.
Office Action, issued in U.S. Appl. No. 11/873,283, mailed Mar. 10, 2010.
International Search Report and Written Opinion of the International Searching Authority, for PCT/US2008/079423, mailed Dec. 19, 2008, 10 pages.
International Preliminary Report on Patentability mailed Jan. 22, 2009 for PCT/US2007/072974.
International Preliminary Report on Patentability mailed Jan. 22, 2009 for PCT/US2007/072981.
JEDEC, “Double Data Rate (DDR) SDRAM Specification,” JEDEC Standard No. 79E, May 2005, 83 pages, JEDEC Solid State Technology Association.
Ma, Chiyuan et al., “A DRAM Precharge Policy Based on Address Analysis,” 10th Euromicro Conference on Digital System Design Architectures, Methods and Tools (DSD 2007), Aug. 31, 2007, pp. 244-248, IEEE.
Micron, “DDR2 SDRAM,” Data Sheet, Aug. 2006, Rev. K, 133 pages.
U.S. Appl. No. 11/771,895, filed Jun. 29, 2007.
U.S. Appl. No. 11/873,283, filed Oct. 16, 2007.
U.S. Appl. No. 11/771,853, filed Jun. 29, 2007.
Office Action, issued in U.S. Appl. No. 11/873,283, mailed Jul. 16, 2010.
International Preliminary Report on Patentability, issued in International Application No. PCT/US2008/079423, mailed Apr. 29, 2010, 7 pages.
Office Action, issued in U.S. Appl. No. 11/875,636, mailed Dec. 8, 2010, 7 pages.
Office Action, issued in Korean Patent Application No. 10-2009-7002540, mailed Oct. 27, 2010, 3 pages.
Notice of Allowance, issued in U.S. Appl. No. 11/873,283 mailed Mar. 31, 2011, 10 pages.
Le Vu A
S. Aqua Semiconductor LLC
Schwabe Williamson & Wyatt P.C.
Yang Han
LandOfFree
Memories with front end precharge does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Memories with front end precharge, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memories with front end precharge will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2707283