Memories, systems, and methods using precision sense amplifiers

Static information storage and retrieval – Read/write circuit – Differential sensing

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365205, 365210, G11C 700

Patent

active

059264284

ABSTRACT:
A memory includes a bitline comprised of 2 half-bitlines with at least one cell coupled to each of the half-bitlines. A sense amplifier for detecting a voltage difference is coupled between the half-bitlines. A control signal controls the current through the sense amplifier. A method is provided for sensing data by precharging a pair of half-bitlines, activating a storage cell coupled to one half-bitline and reference cell coupled to its complement. A sense amplifier senses the voltage difference between the half-bitlines by initiating current flow through the sense amplifier during an intitial period and increasing the current flow during a subsequent period.

REFERENCES:
patent: 5253196 (1993-10-01), Shimabukuro et al.
patent: 5434816 (1995-07-01), Levi
patent: 5438543 (1995-08-01), Yoon
patent: 5467305 (1995-11-01), Bertin et al.

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