Electricity: measuring and testing – Measuring – testing – or sensing electricity – per se – With rotor
Reexamination Certificate
2005-09-06
2008-10-14
Nguyen, Ha (Department: 2829)
Electricity: measuring and testing
Measuring, testing, or sensing electricity, per se
With rotor
C324S762010, C324S762010, C702S082000
Reexamination Certificate
active
07436169
ABSTRACT:
Methods of characterizing a mechanical stress level in a stressed layer of a transistor and a mechanical stress characterizing test structure are disclosed. In one embodiment, the test structure includes a first test transistor including a first stress level; and at least one second test transistor having a substantially different second stress level. A testing circuit can then be used to characterize the mechanical stress level by comparing performance of the first test transistor and the at least one second test transistor. The type of test structure depends on the integration scheme used. In one embodiment, at least one second test transistor is provided with a substantially neutral stress level and/or an opposite stress level from the first stress level. The substantially neutral stress level may be provided by either rotating the transistor, removing the stressed layer causing the stress level or de-stressing the stressed layer causing the stress layer.
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Chan Victor
Lim Khee Yong
Hoffman Warnick
International Business Machines - Corporation
Isla Rodas Richard
Nguyen Ha
Yaghmour Rosa
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