Materials with enhanced properties for shallow trench...

Details Materials with enhanced properties for shallow trench... Materials with enhanced properties for shallow trench...

2006-12-26

2006-12-26

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

C438S778000, C438S781000, C438S787000

Reexamination Certificate

active

07153783

ABSTRACT:
The present invention relates to semiconductor device fabrication and more specifically to a method and material for forming high density shallow trench isolation structures in integrated circuits capable of withstanding wet etch treatments. A silica dielectric film is formed on a substrate. The silica dielectric film has a density of from about 1.0 to about 2.3 g/ml, a SiC:SiO bond ratio of about 0.015 or more, a dielectric constant of about 4.0 or less, a breakdown voltage of about 2 MV/cm or more, and a wet etch resistance in a 100:1 by volume mixture of water and hydrogen fluoride of about 30 Å/minute or less.

REFERENCES:
patent: 6268457 (2001-07-01), Kennedy et al.
patent: 6365765 (2002-04-01), Baldwin et al.
patent: 6368400 (2002-04-01), Baldwin et al.
patent: 6605362 (2003-08-01), Baldwin et al.
patent: WO 03088344 (2003-10-01), None

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