Etching a substrate: processes – Gas phase etching of substrate – With measuring – testing – or inspecting
Patent
1996-03-29
2000-02-22
Powell, William
Etching a substrate: processes
Gas phase etching of substrate
With measuring, testing, or inspecting
156345, 216 67, B44C 122
Patent
active
060276622
ABSTRACT:
The invention provides method and apparatus for materials processing that enable the concentration and identity of a constituent of an excited gaseous materials processing medium to be selected relatively independently of the concentration and identity of other constituents of the same medium. Individual constituents are generated at distinct, separate locations, such as separate chambers, under different process conditions; one or more of the temperature, pressure, power exposure, gas composition and local reactor geometry, selected to optimize generation of a specific constituent, are different at the two locations. Then the individual constituents are combined and brought into contact with the substrate to be treated. In another aspect, the invention allows for the generation of the entire excited portion of a processing medium at a single location distinct from the site of substrate treatment in order to weaken the coupling between the generation of the medium and its application.
REFERENCES:
patent: 5405492 (1995-04-01), Moslehi
patent: 5498312 (1996-03-01), Laermer
Lam Research Corporation
Powell William
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