Materials and methods for plasma etching of oxides and nitrides

Details Materials and methods for plasma etching of oxides and nitrides Materials and methods for plasma etching of oxides and nitrides

1981-10-26

1983-03-15

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156345, 156644, 156646, 156657, 1566591, 204192E, 204298, 252 791, 430313, 430317, B44C 122, C03C 1500, C03C 2506, H01L 21306

Patent

active

043766722

ABSTRACT:
A method for etching a layer of inorganic insulating material formed on a semiconductor wafer and containing silicon as the principal metallic element. The method involves disposing a wafer on one of a pair of electrode structures in a closed chamber. A reactive gas mixture comprising principally a fluorocarbon gas doped with a preselected quantity of carbon dioxide is supplied to the chamber.
Radio frequency electrical energy is supplied to one of the electrode structures to create a plasma of the reactive gas mixture for chemically attacking the insulating material.

REFERENCES:
patent: 3795557 (1974-03-01), Jacob
patent: 3800684 (1975-04-01), Abe
patent: 4174251 (1979-11-01), Paschke
patent: 4243476 (1981-01-01), Ahn et al.
patent: 4253907 (1981-03-01), Parry et al.
patent: 4260649 (1981-04-01), Dension et al.
Abstract of Japanese Patent No. 53-14571, Etching Method and Mixed Gas For Etching by Kokai, 9/2/78, one page.

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