Materials and methods for plasma etching of aluminum and aluminu

Details Materials and methods for plasma etching of aluminum and aluminu Materials and methods for plasma etching of aluminum and aluminu

1982-11-03

1983-11-01

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156656, 1566591, 204192E, 252 791, C23F 102

Patent

active

044128851

ABSTRACT:
A method for etching a layer of aluminum or aluminum alloy on a semiconductor wafer using the steps:
disposing the wafer on one of a pair of electrode structures in a closed chamber;
communicating into the chamber a reactive gas mixture comprising a principal gas mixture of BCl.sub.3 and Cl.sub.2 and a dopant gas of oxygen and fluorocarbon gas; and
supplying radio frequency electrical energy to one of the electrode structures to create a plasma of the reactive gas mixture for etching the aluminum layer.

REFERENCES:
patent: 4267013 (1981-05-01), Iida et al.
patent: 4352724 (1982-10-01), Sugishima et al.

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