Material for forming resist protecting film for use in...

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface

Reexamination Certificate

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Details

C430S273100, C430S327000, C430S396000, C524S543000, C524S544000, C524S545000, C524S546000, C524S547000

Reexamination Certificate

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11702602

ABSTRACT:
Provided are a material for forming a resist protecting film which is for use in a liquid immersion lithography process and which is formed on a resist film, wherein the material has the following properties of: being transparent with respect to exposure light; having substantially no compatibility with a liquid for liquid immersion lithography; and causing no mixing with the resist film, a composite film comprising a protective film formed from the material and a resist film, and a method for forming a resist pattern using them. These can prevent both the resist film and the liquid used from changing in properties during the liquid immersion lithography, so that a resist pattern with high resolution can be formed using the liquid immersion lithography.

REFERENCES:
patent: 3895949 (1975-07-01), Akamatsu et al.
patent: 5282066 (1994-01-01), Yu et al.
patent: 5728508 (1998-03-01), Takemura et al.
patent: 6136505 (2000-10-01), Tanabe et al.
patent: 7129009 (2006-10-01), French et al.
patent: 2004/0075895 (2004-04-01), Lin
patent: 2005/0123863 (2005-06-01), Chang et al.
patent: 2005/0175940 (2005-08-01), Dierichs
patent: 2005/0186516 (2005-08-01), Endo et al.
patent: 2005/0202347 (2005-09-01), Houlihan et al.
patent: 2005/0250898 (2005-11-01), Maeda et al.
patent: 2005/0266354 (2005-12-01), Li et al.
patent: 2006/0029884 (2006-02-01), Hatakeyama et al.
patent: 2006/0105272 (2006-05-01), Gallagher et al.
patent: 2006/0111550 (2006-05-01), Hata et al.
patent: 2006/0234164 (2006-10-01), Rhodes et al.
patent: 2006/0275704 (2006-12-01), Hinsberg, III
patent: 2006/0275706 (2006-12-01), Corliss et al.
patent: 62-65326 (1987-03-01), None
patent: 7-253674 (1995-10-01), None
patent: 8-76382 (1996-03-01), None
patent: 10-303114 (1998-11-01), None
patent: 11-352697 (1999-12-01), None
patent: 99/49504 (1999-09-01), None
Hoffnagle, J.A. et al., “Liquid immersion deep-ultraviolet interferometric lithography”,Journal of Vacuum Science and Technology, B 17(6), pp. 3306 to 3309 (1999).
Switkes, M. et al., “Immersion lithography at 157 nm”,Journal of Vacuum Science and Technology, B 19(6), pp. 2353 to 2356 (2001).
Switkes, M. et al., “Resolution Enhancement of 157 nm, Lithography by Liquid Immersion”Proceedings of SPIE, vol. 4691, pp. 459 to 465 (2002).

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