Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface
Reexamination Certificate
2008-05-13
2008-05-13
Schilling, Richard L. (Department: 1795)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Forming nonplanar surface
C430S273100, C430S327000, C430S396000, C524S543000, C524S544000, C524S545000, C524S546000, C524S547000
Reexamination Certificate
active
11702602
ABSTRACT:
Provided are a material for forming a resist protecting film which is for use in a liquid immersion lithography process and which is formed on a resist film, wherein the material has the following properties of: being transparent with respect to exposure light; having substantially no compatibility with a liquid for liquid immersion lithography; and causing no mixing with the resist film, a composite film comprising a protective film formed from the material and a resist film, and a method for forming a resist pattern using them. These can prevent both the resist film and the liquid used from changing in properties during the liquid immersion lithography, so that a resist pattern with high resolution can be formed using the liquid immersion lithography.
REFERENCES:
patent: 3895949 (1975-07-01), Akamatsu et al.
patent: 5282066 (1994-01-01), Yu et al.
patent: 5728508 (1998-03-01), Takemura et al.
patent: 6136505 (2000-10-01), Tanabe et al.
patent: 7129009 (2006-10-01), French et al.
patent: 2004/0075895 (2004-04-01), Lin
patent: 2005/0123863 (2005-06-01), Chang et al.
patent: 2005/0175940 (2005-08-01), Dierichs
patent: 2005/0186516 (2005-08-01), Endo et al.
patent: 2005/0202347 (2005-09-01), Houlihan et al.
patent: 2005/0250898 (2005-11-01), Maeda et al.
patent: 2005/0266354 (2005-12-01), Li et al.
patent: 2006/0029884 (2006-02-01), Hatakeyama et al.
patent: 2006/0105272 (2006-05-01), Gallagher et al.
patent: 2006/0111550 (2006-05-01), Hata et al.
patent: 2006/0234164 (2006-10-01), Rhodes et al.
patent: 2006/0275704 (2006-12-01), Hinsberg, III
patent: 2006/0275706 (2006-12-01), Corliss et al.
patent: 62-65326 (1987-03-01), None
patent: 7-253674 (1995-10-01), None
patent: 8-76382 (1996-03-01), None
patent: 10-303114 (1998-11-01), None
patent: 11-352697 (1999-12-01), None
patent: 99/49504 (1999-09-01), None
Hoffnagle, J.A. et al., “Liquid immersion deep-ultraviolet interferometric lithography”,Journal of Vacuum Science and Technology, B 17(6), pp. 3306 to 3309 (1999).
Switkes, M. et al., “Immersion lithography at 157 nm”,Journal of Vacuum Science and Technology, B 19(6), pp. 2353 to 2356 (2001).
Switkes, M. et al., “Resolution Enhancement of 157 nm, Lithography by Liquid Immersion”Proceedings of SPIE, vol. 4691, pp. 459 to 465 (2002).
Hirayama Taku
Sato Mitsuru
Takasu Ryoichi
Tamura Koki
Wakiya Kazumasa
Schilling Richard L.
Tokyo Ohka Kogyo Co. Ltd.
Wenderoth Lind & Ponack LLP
LandOfFree
Material for forming resist protecting film for use in... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Material for forming resist protecting film for use in..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Material for forming resist protecting film for use in... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3944346