Material architecture for the fabrication of low temperature...

Details Material architecture for the fabrication of low temperature... Material architecture for the fabrication of low temperature...

2007-01-30

2007-01-30

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S303000, C438S305000

Reexamination Certificate

active

10886442

ABSTRACT:
A structure and method for forming a carbon-containing layer in at least a portion of the end of range regions of implanted PAI and/or doped regions. The C-containing layer/region getters defects from the implanted PAI region or doped region. Example embodiments show a C-containing layer under at FET. Other example embodiments show an implanted C-containing regions implanted into the EOR region of implanted doped regions, such as pocket regions, S/D regions and SDE regions. Low temperature anneals can be used because the carbon-containing layer reduces defects.

REFERENCES:
patent: 5731626 (1998-03-01), Eaglesham et al.
patent: 6043139 (2000-03-01), Eaglesham et al.
patent: 6153920 (2000-11-01), Gossmann et al.
patent: 6268640 (2001-07-01), Park et al.
patent: 6335233 (2002-01-01), Cho et al.
patent: 6576535 (2003-06-01), Drobny et al.
patent: 2003/0230784 (2003-12-01), Iwata et al.
patent: 2004/0077157 (2004-04-01), Chakravarthi et al.
Nishikawa, S., et al., “Reduction of transient boron diffusion in preamorphized Si by carbon implantation,” Appl. Phys. Lett., 60(18), May 4, 1992.
King et al., “Defect evolution of low energy, amorphizing germanium implanted in silicon”, Journal of applied physics, vol. 93, #5, Mar. 2003, pp. 2449=-2452.
Nishikawa et al., “Elimination of secondary defects in preamorphized Si by C+ implantation”, appl. phys. Lett 62 (3) Jan. 18, 1993, pp. 303-305.
Nado, Indium segregation into dislocation loops induced by ion implanted damage in Si, journal of applied physics v. 93, #3, Feb. 1, 2003, pp. 1428-1431.

Affiliated with

Also associated with

Rating

Material architecture for the fabrication of low temperature... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Material architecture for the fabrication of low temperature..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Material architecture for the fabrication of low temperature... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3817414