Material and method for photolithography

Details Material and method for photolithography Material and method for photolithography

2007-05-14

2011-10-04

Lee, Sin J. (Department: 1722)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

C430S907000, C430S910000, C430S325000, C430S326000, C430S273100

Reexamination Certificate

active

08029969

ABSTRACT:
A photosensitive material for use in semiconductor manufacture comprises a copolymer that includes a plurality of photoresist chains and a plurality of hydrophobic chains, each hydrophobic chain attached to the end of one of the photoresist chains. The copolymer in response to externally applied energy will self-assemble to a photoresist layer and a hydrophobic layer.

REFERENCES:
patent: 6953649 (2005-10-01), Prat et al.
patent: 2005/0089800 (2005-04-01), Lee
patent: 2007/0099114 (2007-05-01), Watanabe et al.
patent: 2007/0172761 (2007-07-01), Takahashi et al.
Elke Buck et al., “Surface-Induced Microphase Separation in Spin-Cast Ultrathin Diblock Copolymer Films on Silicon Substrate before and after Annealing,” Macromolecules 2001, 34, 2127-2178.

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