Material and method for forming low-dielectric-constant film

Details Material and method for forming low-dielectric-constant film Material and method for forming low-dielectric-constant film

2007-10-09

2007-10-09

Huynh, Andy (Department: 2818)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S788000, C438S421000, C428S001230, C428S001520, C428S001600

Reexamination Certificate

active

11156570

ABSTRACT:
The material contemplated by this invention for the formation of a low-dielectric-constant film contains in all the stereoisomer molecules of 1,3,5,7-tetramethyl cyclotetrasiloxane (TMCTS) not less than 15% and not more than 100% of a stereoisomer having all the four hydrogen atoms forming an Si—H bond fall on the same size relative to the Si—O ring plane. It is utilized as a material for forming a low-dielectric-constant film which can be used for enhancing the function of an integrated circuit in the field of semiconductors.

REFERENCES:
patent: 6051321 (2000-04-01), Lee et al.
Y. Oku, et al., “Novel Self-Assembled Ultra-Low-k Porous Silica Films with High Mechanical Strength for 45 nm BEOL Technology”, Proc. IEDM 2003, 4 pages.

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