Masks, lithography device and semiconductor component

Details Masks, lithography device and semiconductor component Masks, lithography device and semiconductor component

2003-09-17

2009-08-11

Rosasco, Stephen (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

Reexamination Certificate

active

07572556

ABSTRACT:
A mask having a multilayer coating of a specified period thickness distribution such as those used in lithography devices for producing semiconductor components. One problem of projection optics concerns pupil apodization which leads to imaging defects. As here proposed, the period thickness in the mask plane is selected so that it is greater than the period thickness for maximum reflectivity. As a result, not only does the apodization over the pupil become more symmetric but the intensity variation also becomes smaller overall.

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M. Singh, et al., Design of multilayer extreme-ultraviolet mirrors for enchanced reflectivity, Applied Optics, May 1, 2001, vol. 39, No. 13, pp. 21892197, XP 000940136.

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