Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-06-21
2009-06-02
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S327000, C257S335000, C257S336000, C257S344000, C257S382000, C257S383000, C257S384000, C257S391000, C257S408000, C257S900000, C257SE29156, C257SE29161
Reexamination Certificate
active
07541653
ABSTRACT:
Disclosed are a mask ROM device and a method of forming the same. This device includes a plurality of cells. At least one among the plurality of cells is programmed. The programmed cell includes a cell gate pattern, cell source/drain regions, a cell insulating spacer, a cell metal silicide, and a cell metal pattern. The cell metal pattern is extended along a surface of a cell capping pattern being the uppermost layer of the cell insulating spacer and the cell gate pattern to be electrically connected to cell metal silicide at opposing sides of the cell gate pattern.
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F. Chau & Associates LLC
Samsung Electronics Co,. Ltd.
Soward Ida M
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