Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2010-07-14
2011-11-08
Sefer, Ahmed (Department: 2893)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C257SE27081, C257SE21670
Reexamination Certificate
active
08053342
ABSTRACT:
A mask read-only memory (ROM) device, which can stably output data, includes an on-cell and an off-cell. The on-cell includes an on-cell gate structure on a substrate and an on-cell junction structure within the substrate. The off-cell includes an off-cell gate structure on the substrate and an off-cell junction structure within the substrate. The on-cell gate structure includes an on-cell gate insulating film, an on-cell gate electrode and an on-cell gate spacer. The on-cell junction structure includes first and second on-cell ion implantation regions of a first polarity and third and fourth on-cell ion implantation regions of a second polarity. The off-cell gate structure includes an off-cell gate insulating film, an off-cell gate electrode and an off-cell gate spacer. The off-cell junction structure includes first and second off-cell ion implantation regions of the first polarity and a third off-cell ion implantation region of the second polarity.
REFERENCES:
patent: 2008/0179692 (2008-07-01), Chun et al.
Chun Myung-Jo
Han Jeong-Uk
Jeon Hee-Seog
Kim Young-Ho
Lee Yong-Kyu
F. Chau & Associates LLC
Samsung Electronics Co,. Ltd.
Sefer Ahmed
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