Mask profile control for controlling feature profile

Details Mask profile control for controlling feature profile Mask profile control for controlling feature profile

2008-03-11

2008-03-11

Chen, Kin-Chan (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S723000

Reexamination Certificate

active

11406485

ABSTRACT:
A method for etching features into a dielectric layer over a substrate and existent below a polymeric hard mask is provided. The substrate is placed in a plasma processing chamber. Mask features are etched into the polymeric hard mask and necks are formed inadvertently. A plasma treatment process performed before the dielectric etch step process can selectively etch away the necks. As a result, neckless features are created into the polymeric hardmask. Features etched into the underneath dielectric layer through the neckless polymeric hard mask have straight profiles.

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