Mask profile control for controlling feature profile

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

Reexamination Certificate

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C438S723000

Reexamination Certificate

active

07341953

ABSTRACT:
A method for etching features into a dielectric layer over a substrate and existent below a polymeric hard mask is provided. The substrate is placed in a plasma processing chamber. Mask features are etched into the polymeric hard mask and necks are formed inadvertently. A plasma treatment process performed before the dielectric etch step process can selectively etch away the necks. As a result, neckless features are created into the polymeric hardmask. Features etched into the underneath dielectric layer through the neckless polymeric hard mask have straight profiles.

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patent: 2004/0058552 (2004-03-01), Higuchi
patent: 2004/0072443 (2004-04-01), Huang et al.
patent: 2005/0070117 (2005-03-01), Jacobs et al.

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