Mask pattern for semiconductor device fabrication, method of...

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C430S311000, C430S313000, C430S317000, C430S330000, C430S005000, C430S009000, C430S014000, C430S015000, C430S018000

Reexamination Certificate

active

07851125

ABSTRACT:
Provided are a mask pattern including a silicon-containing self-assembled molecular layer, a method of forming the same, and a method of fabricating a semiconductor device. The mask pattern includes a resist pattern formed on a semiconductor substrate and the self-assembled molecular layer formed on the resist pattern. The self-assembled molecular layer has a silica network formed by a sol-gel reaction. To form the mask pattern, first, the resist pattern is formed with openings on an underlayer covering the substrate to expose the underlayer to a first width. Then, the self-assembled molecular layer is selectively formed only on a surface of the resist pattern to expose the underlayer to a second width smaller than the first width. The underlayer is etched by using the resist pattern and the self-assembled molecular layer as an etching mask to obtain a fine pattern.

REFERENCES:
patent: 6015761 (2000-01-01), Merry et al.
patent: 7524408 (2009-04-01), Monbouquette et al.
patent: 7571529 (2009-08-01), Sirringhaus et al.
patent: 2003/0082488 (2003-05-01), Rottstegge et al.
patent: 2004/0009436 (2004-01-01), Lee et al.
patent: 2005/0227492 (2005-10-01), Hah et al.
patent: 2006/0084277 (2006-04-01), Nakashima et al.
patent: 1488995 (2001-04-01), None
patent: 1407116 (2003-04-01), None
patent: 2004-37570 (2004-02-01), None
patent: 10-2001-0037049 (2001-05-01), None
patent: 10-2003-0049198 (2003-06-01), None
patent: 10-2004-0015955 (2004-02-01), None
Chinese Office Action dated Apr. 10, 2009 in corresponding Chinese Appln. No. 2005100874497.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Mask pattern for semiconductor device fabrication, method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Mask pattern for semiconductor device fabrication, method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Mask pattern for semiconductor device fabrication, method of... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4174840

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.