Mask layout and exposing method for reducing diffraction...

Details Mask layout and exposing method for reducing diffraction... Mask layout and exposing method for reducing diffraction...

2005-08-02

2005-08-02

Huff, Mark F. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Electron beam imaging

C430S394000

Reexamination Certificate

active

06924083

ABSTRACT:
The present invention discloses appropriate layout design of a single mask and proper operation of exposing device in the process of semiconductor production for reducing diffraction effects caused by tiny pattern in exposing process, therefore effectively enhances the resolution in exposing process, and increases the yield.

REFERENCES:
patent: 5972568 (1999-10-01), Seniuk et al.

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