Mask for photolithography, method of forming thin film,...

Details Mask for photolithography, method of forming thin film,... Mask for photolithography, method of forming thin film,...

2004-09-29

2008-12-23

McPherson, John A. (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making named article

C430S322000, C430S396000, C355S018000, C355S053000

Reexamination Certificate

active

07468239

ABSTRACT:
A mask for photolithography in which a semi-transmission film is formed so that the phase difference of lights passing through a semi-transmission portion and a transmission portion of the mask for photolithography is between (−¼+2 m) π and (¼+2 m) π inclusive, where m is an integer. The invention makes it possible to efficiently and properly form a thin film having a multi-step structure by a single process.

REFERENCES:
patent: 6096457 (2000-08-01), Pierrat
patent: 6306547 (2001-10-01), Kobayashi
patent: 2002/0021403 (2002-02-01), Kim et al.
patent: 07-230161 (1995-08-01), None
patent: 09-304914 (1997-11-01), None
patent: 11-015140 (1999-01-01), None
patent: 11-119411 (1999-04-01), None
Abstract of RD 409087, May 1998.

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