Mask complementary multiple exposure technique

Details Mask complementary multiple exposure technique Mask complementary multiple exposure technique

2008-06-17

2008-06-17

Huff, Mark F. (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

C430S005000, C430S397000, C430S394000, C430S313000

Reexamination Certificate

active

07387871

ABSTRACT:
A method for creating a pattern on an exposure site of a material blank using an exposure apparatus includes providing a mask having a first mask pattern. The mask is positioned between the exposure apparatus and the material blank. The exposure site of the material blank is exposed. One or more additional exposure events are performed for patterning the exposure site of the material blank. Between each exposure event, the exposure site of the material blank is repositioned in a lateral direction with respect to the mask. Between successive exposure events involving the first mask pattern, there is a relative movement between the mask and the material blank of a distance less than or equal to a length of the first mask pattern.

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