Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design
Reexamination Certificate
2007-12-04
2007-12-04
Lin, Sun James (Department: 2825)
Computer-aided design and analysis of circuits and semiconductor
Nanotechnology related integrated circuit design
C716S030000
Reexamination Certificate
active
11155159
ABSTRACT:
The present disclosure provides a method of forming a photomask layout. In one example, the method comprises selecting a pattern feature on the photomask layout, defining a global area centered at the pattern feature on the photomask layout, calculating a pattern density inside the global area, and correcting the pattern feature based on the pattern density and patterning process data.
REFERENCES:
patent: 5740068 (1998-04-01), Liebmann et al.
patent: 5858591 (1999-01-01), Lin et al.
patent: 6194104 (2001-02-01), Hsu
patent: 6316152 (2001-11-01), Hsieh et al.
patent: 6472108 (2002-10-01), Lin
patent: 2002/0175298 (2002-11-01), Moniwa et al.
patent: 2003/0229412 (2003-12-01), White et al.
patent: 2004/0058255 (2004-03-01), Jessen et al.
patent: 2004/0060033 (2004-03-01), Kamon
Haynes and Boone LLP
Lin Sun James
Taiwan Semiconductor Manufacturing Company , Ltd.
LandOfFree
Mask CD correction based on global pattern density does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Mask CD correction based on global pattern density, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Mask CD correction based on global pattern density will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3856032