Mask CD correction based on global pattern density

Details Mask CD correction based on global pattern density Mask CD correction based on global pattern density

2007-12-04

2007-12-04

Lin, Sun James (Department: 2825)

Computer-aided design and analysis of circuits and semiconductor

Nanotechnology related integrated circuit design

C716S030000

Reexamination Certificate

active

11155159

ABSTRACT:
The present disclosure provides a method of forming a photomask layout. In one example, the method comprises selecting a pattern feature on the photomask layout, defining a global area centered at the pattern feature on the photomask layout, calculating a pattern density inside the global area, and correcting the pattern feature based on the pattern density and patterning process data.

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patent: 2004/0060033 (2004-03-01), Kamon

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