Mask and method of creating mask as well as electron-beam exposu

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Electron beam imaging

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430 5, 2504923, G03F 900, G03C 500, G21K 510, A61N 500

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active

059521554

ABSTRACT:
A device exposing an object to an electron beam employs a mask formed of a plate of material which blocks the electron beam and which has plural pattern exposure blocks defined therein, each having one or more aperture defining regions therein and, when selected, determining the shaping of the electron beam passing therethrough so as to expose a respective pattern on an object. Each aperture-defining region has a respective single aperture or respective plural, spaced apertures formed therein and having a total area size selected to be smaller than the area size of the aperture defining region, in accordance with controlling the current level of an electron beam passing therethrough, while reducing Coulomb interaction of the electron beam passing through the aperture or apertures of each aperture defining portion of the pattern exposure block.

REFERENCES:
patent: 5288567 (1994-02-01), Sakamoto et al.
patent: 5557110 (1996-09-01), Itoh
Yamashita et al., "Resolution analysis in electron-beam cell projection lithography system," J. Vac. Sci. Technol. B. vol. 13, No. 6, Nov./Dec. 1995, pp. 2473-2477.

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