Manufacturing process of capacitor

Details Manufacturing process of capacitor Manufacturing process of capacitor

1998-07-15

2000-09-12

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438255, H01L 218242

Patent

active

06117727&

ABSTRACT:
A method for manufacturing a capacitor includes the steps of a) forming a sacrificial layer over the etching stop layer, b) partially removing the sacrificial layer, the etching stop layer, and the dielectric layer to form a contact window, c) forming a first conducting layer over the sacrificial layer and in the contact window, d) partially removing the first conducting layer and the sacrificial layer to expose a portion of the sacrificial layer and retain a portion of the first conducting layer, e) forming a second conducting layer on tops and sidewalls of the portion of the first conducting layer and the portion of the sacrificial layer, f) partially removing the second conducting layer while retaining a portion of the second conducting layer alongside the portion of the first conducting layer and the portion of the sacrificial layer, and removing the portion of the sacrificial layer to expose the etching stop layer, and g) forming a rugged conducting layer on surfaces of the portion of the first conducting layer and the portion of the second conducting layer to construct a capacitor plate with a generally crosssectionally modified T-shaped structure having a rough surface.

REFERENCES:
patent: 5804481 (1998-12-01), Tseng
patent: 5851878 (1998-12-01), Huang

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