Manufacturing process and structure of integrated circuit

Details Manufacturing process and structure of integrated circuit Manufacturing process and structure of integrated circuit

2007-04-17

2007-04-17

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S212000, C257S330000

Reexamination Certificate

active

11035700

ABSTRACT:
The present invention provides a manufacturing process and the structure of an integrated circuit. In one embodiment, one polysilicon layer deposition and one polysilicon layer etching are used to form the gate of a trench device and the polysilicon layer of a planar device simultaneously. The present invention not only has overcome the problem of the electric leakage, but also has the advantages of withstanding a higher voltage, reducing the relevant cost and increasing the yields. The present invention possesses the outstanding technical features in the field of the power device.

REFERENCES:
patent: 6710406 (2004-03-01), Mo et al.
patent: 7005351 (2006-02-01), Henninger et al.

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