Manufacturing process and structure of capacitor

Details Manufacturing process and structure of capacitor Manufacturing process and structure of capacitor

1998-08-11

2000-11-28

Trinh, Michael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438255, 438398, 438665, H01L 218242

Patent

active

061534625

ABSTRACT:
A method is provided for manufacturing a capacitor having a generally crosssectionally modified T-shaped structure with a rough surface to serve as a lower capacitor plate, and having another dielectric layer and another conducting layer to construct an upper capacitor plate. Such a structure not only significantly increases the surface area of the capacitor but is conducive to the subsequent planarization process.

REFERENCES:
patent: 5137842 (1992-08-01), Chan et al.
patent: 5663090 (1997-09-01), Dennison et al.
patent: 5721153 (1998-02-01), Kim et al.
patent: 5733809 (1998-03-01), Dennison et al.
patent: 5851876 (1998-12-01), Jeng
patent: 5877052 (1999-03-01), Lin et al.
patent: 5953608 (1999-09-01), Hirota
patent: 5970358 (1999-10-01), Howard

Affiliated with

Also associated with

Rating

Manufacturing process and structure of capacitor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Manufacturing process and structure of capacitor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing process and structure of capacitor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1724584