Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1987-01-02
1988-05-17
Powell, William A.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156656, 156657, 1566591, 156662, 350333, 357 58, 437180, 437228, H01L 2306, B44C 122, C03C 1500, C23F 102
Patent
active
047448628
ABSTRACT:
A method of manufacturing a liquid crystal display panel including preparing a first substrate member by forming a first conductive layer serving as a first electrode on a first substrate having an insulating surface; forming a first non-single-crystal semiconductor layer laminate layer on the first substrate member where the forming of the first non-single-crystal semiconductor laminate member includes forming at least a first non-single-crystal semiconductor of P (or N) type on the substrate, forming an i-type second non-single-crystal semiconductor layer on the first non-single-crystal semiconduictor layer, the i-type layer containing an additive selected from the group consisting of carbon, nitrogen, oxygen, boron, and mixtures thereof, and forming a third non-single-crystal semiconductor layer of P (or N) type on the i-type second non-single-crystal semiconductor layer; forming a second conductive layer serving as a second electrode in a pattern on the first non-single-crystal semiconductor layer laminate layer in opposing relation to the first conductive layer; selectively etching away the first non-single-crystal semiconductor layer laminate member through the patterned second conductive layer to obtain a second non-single-crystal semiconductor laminate member; preparing a second substrate member by forming on a second substrate an insulating surface and a third conductive layer; and filling liquid crystal in a gap defined by the first and second substrate members.
REFERENCES:
patent: 4331758 (1982-05-01), Luo
patent: 4654117 (1987-03-01), Aoki et al.
Inushima Takashi
Konuma Toshimitsu
Mase Akira
Miyazaki Minoru
Sakama Mitsunori
Ferguson Jr. Gerald J.
Foycik, Jr. Michael J.
Hoffman Michael P.
Powell William A.
Semiconductor Energy Laboratory Co,. Ltd.
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