Manufacturing methods and structures of memory device

Details Manufacturing methods and structures of memory device Manufacturing methods and structures of memory device

2006-06-27

2006-06-27

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S211000

Reexamination Certificate

active

07067374

ABSTRACT:
Dual spacer structures are fabricated such that sidewall spacers in a cell region are thinner than sidewall spacers in a periphery region. The fabricating method of memory includes forming a stop layer over the first semiconductor feature and the second semiconductor feature in cell region and periphery region. A spacer layer is formed over the stop layer in the periphery region. The spacer layer is patterned to form a spacer on a sidewall of the second semiconductor feature. An etching process is performed to form a resultant spacer on an interior sidewall of the opening between first semiconductor features. The stop layer on top surfaces of the first and second semiconductor features is removed.

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