Manufacturing method of transistors

Details Manufacturing method of transistors Manufacturing method of transistors

1995-11-27

1998-11-17

Everhart, Caridad

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438659, 438680, 438683, H01L 21441

Patent

active

058376054

ABSTRACT:
A manufacturing method for transistors wherein silicide is directed doped with a conductive impurity includes the steps of: forming a field oxide film defining an active region on a semiconductor substrate; forming transistors wherein a doped first silicide film is formed on gate electrodes on said active region; forming an interlayer dielectric film having contact holes on the whole surface of said semiconductor substrate; forming spacers on the innerwalls of each contact hole;p forming a thin doped polysilicon film on the whole surface of said semiconductor surface; and forming a doped second silicide film on the whole surface of said doped polysilicon film, filling each contact hole. The silicide film is directly doped with conductive impurity so that the conductive impurity of a polysilicon film can be prevented from being diffused to the outside. Therefore, the doped silicide film is useful to prevent the threshold voltage from increasing and the saturation current from reducing.

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