Manufacturing method of semiconductor power devices

Details Manufacturing method of semiconductor power devices Manufacturing method of semiconductor power devices

2008-06-16

2011-11-15

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S564000, C438S589000, C438S596000, C257SE21151, C257SE21410, C257SE21384

Reexamination Certificate

active

08058127

ABSTRACT:
Disclosed is a power semiconductor device, in particular, a trench type power semiconductor device for use in power electronic devices. A method of manufacturing the same is provided. The method of manufacturing the power semiconductor device adopts a trench MOSFET to decrease the size of the device, in place of a vertical type DMOSFET, under a situation in which the cost must be lowered owing to excessive cost competition. As the manufacturing process is simplified and the characteristics are improved, the cost is reduced, resulting in mass production and the creation of profit.

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