Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-08-29
2006-08-29
Tsai, H. Jey (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S305000, C438S308000
Reexamination Certificate
active
07098111
ABSTRACT:
A manufacturing technology of a MOSFET having a shallow junction and a source and drain of a low resistance is provided. After having ion-implanted an As on the surface of a p type well forming a gate electrode, a surface protection layer and an energy absorber layer are deposited on a substrate. When the surface of the substrate is irradiated by a YAG laser beam of the wavelength of 1064 nm for one nano second to 999 nano seconds, a heat absorbed by the energy absorber layer is transmitted to the substrate in an ultra short time, and heats its surface to a melting temperature, and therefore, the impurity is activated, and an extension region of a low resistance is formed in an extremely shallow region of about 20 nm in depth from the surface of the p type well.
REFERENCES:
patent: 5956603 (1999-09-01), Talwar et al.
patent: 6380044 (2002-04-01), Talwar et al.
patent: 2004/0132293 (2004-07-01), Takayama et al.
patent: 2004/0245583 (2004-12-01), Horiuchi et al.
patent: 2001-189458 (2001-07-01), None
patent: 2002-050766 (2002-02-01), None
LandOfFree
Manufacturing method of semiconductor integrated circuit device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Manufacturing method of semiconductor integrated circuit device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing method of semiconductor integrated circuit device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3656211