Manufacturing method of semiconductor devices

Details Manufacturing method of semiconductor devices Manufacturing method of semiconductor devices

2011-03-15

2011-03-15

Quach, Tuan N. (Department: 2893)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S714000, C438S719000, C438S723000, C257SE21312

Reexamination Certificate

active

07906434

ABSTRACT:
A semiconductor device manufacturing method includes: depositing a first insulating film and a second insulating film on a substrate sequentially and forming a pattern on the second insulating film; forming a silicon film on the pattern; forming a sidewall made of the silicon film by processing the silicon film until a part of the second insulating film is exposed by use of etch-back; removing the second insulating film; and performing dry etching by use of a fluorocarbon-based gas, to process the first insulating film by using the sidewall as a mask. The processing of the first insulating film includes applying on the substrate a self-bias voltage Vdc that satisfies a relational expression of Vdc<46x−890, where a film thickness of the silicon film that constitutes the sidewall is x nm (19.5≦x≦22.1).

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