Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-09-29
1999-12-07
Chaudhari, Chandra
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438545, 438702, H01L 21336
Patent
active
059982683
ABSTRACT:
On the surface of a semiconductor substrate there are formed a silicon oxide film, silicon nitride film and resist, whereby a groove is formed in the semiconductor substrate through an opening portion by chemical dry etching. An oxide film is formed on the inner surface of the groove by wet oxidation and, further, this oxide film is removed by wet etching, after which the surface of the semiconductor substrate located on the outer-peripheral side of the groove from an angular portion defined between a side surface of the groove and the surface of the semiconductor substrate is exposed. Then, the inner surface of the groove and the exposed surface of the semiconductor substrate are oxidized to thereby form a LOCOS oxide film, and thereafter this LOCOS oxide film is removed. As a result of this, the angular portion is made round, thereby enabling the avoidance of the concentration of an electric field on the angular portion of the groove.
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Inoshita Ryosuke
Koike Manabu
Miyajima Takeshi
Tomatsu Yutaka
Chaudhari Chandra
Denso Corporation
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