Manufacturing method of semiconductor device suppressing...

Details Manufacturing method of semiconductor device suppressing... Manufacturing method of semiconductor device suppressing...

2007-05-29

2007-05-29

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S198000, C438S199000, C438S212000, C438S213000, C438S216000, C438S217000, C257SE21632

Reexamination Certificate

active

11192424

ABSTRACT:
An ideal step-profile in a channel region is realized easily and reliably, whereby suppression of the short-channel effect and prevention of mobility degradation are achieved together. A silicon substrate is amorphized to a predetermined depth from a semiconductor film, and impurities to become the source/drain are introduced in this state. Then the impurities are activated, and the amorphized portion is recrystallized, by low temperature solid-phase epitaxial regrowth. With the processing temperature required for the low temperature solid-phase epitaxial regrowth being within a range of 450° C.–650° C., thermal diffusion of the impurities into the semiconductor film is suppressed, thereby maintaining the initial steep step-profile.

REFERENCES:
patent: 2004/0207011 (2004-10-01), Iwata et al.
patent: 2006/0157732 (2006-07-01), Von Kaenel et al.
patent: 2003-086706 (2003-03-01), None
patent: 2004153246 (2004-05-01), None
Patent Abstracts of Japan, Publication No. 2004153246, dated May 27, 2004.
Korean Office Action dated Oct. 27, 2006, issued in corresponding Korean patent application No. 10-2005-0067180.

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