Manufacturing method of semiconductor device comprising BiCMOS t

Details Manufacturing method of semiconductor device comprising BiCMOS t Manufacturing method of semiconductor device comprising BiCMOS t

1995-09-19

1997-04-15

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438341, 438365, H01L 21265

Patent

active

056209088

ABSTRACT:
A method of manufacturing a semiconductor device including selectively forming an element-isolating insulating layer on a surface of a semiconductor substrate to define active regions; forming a first insulating layer and removing respective portions thereof on surfaces of a second conductive type active region and a first active region of a first conductive type; oxidizing to form a gate oxide layer; forming and patterning a conductive layer to form a gate electrodes of MOS transistors and a base-extracting electrode of a bipolar transistor; forming an opening, in the base-extracting electrode, and a side wall insulating layer on an inner wall of the opening; removing first and second portions of the insulating layer to form an overhung portion; epitaxially growing a second conductive type semiconductor layer using the base-extracting electrode and active region of the first conductive type as a seed crystal; and selectively forming a first conductive type semiconductor layer that is to become an emitter that does not contact the base-extracting electrode.

REFERENCES:
patent: 5047358 (1991-09-01), Kosiak et al.
patent: 5204276 (1993-04-01), Nakajima et al.
patent: 5296391 (1994-03-01), Sato et al.
patent: 5441903 (1995-08-01), Eklund
patent: 5494836 (1996-02-01), Imai

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