Manufacturing method of semiconductor device capable of...

Details Manufacturing method of semiconductor device capable of... Manufacturing method of semiconductor device capable of...

2011-01-11

2011-01-11

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S424000, C438S425000, C438S427000, C438S700000, C257SE21540

Reexamination Certificate

active

07867834

ABSTRACT:
A manufacturing method of a semiconductor device according to an embodiment includes: forming a trench for a device isolation area and a semiconductor projection with a first width by etching a semiconductor substrate; forming an oxide film on the trench and the semiconductor projections; forming an insulating layer on the oxide film; exposing the upper surface of the semiconductor projection by polishing the insulating layer and the oxide film; forming a gate insulating layer at a lower region of the semiconductor projection; and etching the insulating layer and the oxide film on the substrate.

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