Manufacturing method of semiconductor device and substrate...

Details Manufacturing method of semiconductor device and substrate... Manufacturing method of semiconductor device and substrate...

2009-06-12

2011-12-06

Fourson, III, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S287000, C438S591000, C257SE21179

Reexamination Certificate

active

08071446

ABSTRACT:
A manufacturing method of a semiconductor device, including the steps of: loading into a processing chamber a substrate having a high dielectric gate insulating film and a metal electrode, with a side wall exposed by etching; applying oxidation processing to the substrate by supplying thereto hydrogen-containing gas and oxygen-containing gas excited by plasma, with the substrate heated to a temperature not allowing the high dielectric gate insulating film to be crystallized, in the processing chamber; and unloading the substrate after processing from the processing chamber.

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