Manufacturing method of semiconductor device and...

Details Manufacturing method of semiconductor device and... Manufacturing method of semiconductor device and...

2007-07-24

2007-07-24

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S597000, C257SE21662

Reexamination Certificate

active

11033868

ABSTRACT:
A manufacturing method of a semiconductor device disclosed herein, comprises: forming a first member to be patterned on a semiconductor substrate; patterning the first member to be patterned to form a plurality of parallel linear patterns and a connecting portion which connects the linear patterns on at least one end side of the linear patterns; and etching a region between the linear patterns and the connecting portion to separate the linear patterns and the connecting portion.

REFERENCES:
patent: 2003/0003664 (2003-01-01), Takeuchi et al.
patent: 2003/0210582 (2003-11-01), Kinoshita
patent: 2005/0199938 (2005-09-01), Sakuma et al.
patent: 2006/0081914 (2006-04-01), Miwa
patent: 2006/0091466 (2006-05-01), Sugimae et al.
patent: 2002-313970 (2002-10-01), None
patent: 2004-15056 (2004-01-01), None

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