Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-07-05
2005-07-05
Lee, Hsien-Ming (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S227000, C438S296000, C438S424000, C438S696000, C438S724000
Reexamination Certificate
active
06913962
ABSTRACT:
A manufacturing method of a semiconductor device disclosed herein, comprises: forming a buried insulating film in a semiconductor substrate; forming semiconductor elements isolated by the buried insulating film; cleaning a surface side of the semiconductor substrate with a cleaning solution; and covering a surface side of the buried insulating film with a protective film before the step of cleaning the surface side of the semiconductor substrate, wherein a protective film is resistant to the cleaning solution.
REFERENCES:
patent: 6319784 (2001-11-01), Yu et al.
patent: 6411548 (2002-06-01), Sakui et al.
patent: 6506647 (2003-01-01), Kuroda et al.
patent: 6613636 (2003-09-01), Wada et al.
patent: 2001/0005626 (2001-06-01), Kim et al.
patent: 06-168955 (1994-06-01), None
patent: 08-250716 (1996-09-01), None
patent: 11-340456 (1999-10-01), None
patent: 2002-110997 (2002-04-01), None
patent: 2002-231938 (2002-08-01), None
patent: 2003-037115 (2003-02-01), None
Hogan & Hartson LLP
Kabushiki Kaisha Toshiba
Lee Hsien-Ming
LandOfFree
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