Manufacturing method of semiconductor device

Details Manufacturing method of semiconductor device Manufacturing method of semiconductor device

2006-10-17

2006-10-17

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S622000, C438S637000, C438S639000, C257SE21538

Reexamination Certificate

active

07122463

ABSTRACT:
When the occurrence of the bowing is controlled through the etching conditions, a change in etching conditions causes the bowing. Another problem is a requirement of the larger-sized apparatus for the substrate with a larger diameter in order to allow a whole substrate being subjected equally to the conditions under which no bowing occurs.In the present invention, a first etching is stopped at a depth where no bowing occurs to form an opening section. Next, a protective film for etching is formed on a region of the wall surface of the hole in the opening section where a bowing is liable to appear when an opening is formed further.After that, a second etching is carried out to form an opening further, and thereby a minute opening with an aspect ratio of 13 or higher is made, while suppressing the occurrence of the bowing well.

REFERENCES:
patent: 6200735 (2001-03-01), Ikegami
patent: 6255161 (2001-07-01), Lin
patent: 6300238 (2001-10-01), Lee et al.
patent: 10-092935 (1998-04-01), None
patent: 10-294367 (1998-11-01), None
patent: 11-186225 (1999-07-01), None
patent: 11-214512 (1999-08-01), None
patent: 11-354499 (1999-12-01), None

Affiliated with

Also associated with

Rating

Manufacturing method of semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Manufacturing method of semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing method of semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3713037