Manufacturing method of semiconductor device

Details Manufacturing method of semiconductor device Manufacturing method of semiconductor device

2006-11-14

2006-11-14

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S239000, C438S382000, C438S383000, C438S384000, C438S385000, C438S257000, C438S258000, C438S047000, C438S174000, C257S148000, C257S153000, C257SE21004

Reexamination Certificate

active

07135367

ABSTRACT:
A silicon oxide film as an insulating film is accumulated so as to cover a whole surface of a silicon substrate including a surface of a resistance element by, for example, a thermal CVD method, just after a resist pattern is removed. This silicon oxide film is processed to form a silicide block on the resistance element, and side wall spacers at both side surfaces of gate electrodes, and so on, of respective transistors, at the same time.

REFERENCES:
patent: 6130139 (2000-10-01), Ukeda et al.
patent: 6693002 (2004-02-01), Nakamura et al.
Patent Abstract of Japan, Publication No. 2003158196 A, published on May 30, 2003.
Patent Abstract of Japan, Publication No. 10150154 A, published on Jun. 2, 1998.

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