Manufacturing method of semiconductor device

Details Manufacturing method of semiconductor device Manufacturing method of semiconductor device

2006-12-12

2006-12-12

Hoang, Quoc (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

Reexamination Certificate

active

07148132

ABSTRACT:
A method of manufacturing a semiconductor device. A cobalt film is formed on a wafer including gate, source, and drain regions. An initial protection metal film is formed with an initial amount of a protection metal film material on the cobalt film. The wafer is thermally treated to form a cobalt silicide film. An additional protection metal film is formed with an additional amount of the protection metal film material.

REFERENCES:
patent: 5970370 (1999-10-01), Besser et al.
patent: 6333262 (2001-12-01), Tseng et al.
patent: 6346477 (2002-02-01), Kaloyeros et al.

Affiliated with

Also associated with

Rating

Manufacturing method of semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Manufacturing method of semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing method of semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3656018